THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR, AND DISPLAY USING THIN-FILM TRANSISTOR

摘要

A TFT is provided to obtain an optimum characteristic by forming an edge of a drain or source region in contact with a channel region in a crystallization region in a position not corresponding to a crystal growth starting position or a vertical growth starting position. A TFT(1) has a source region, a channel region and a drain region in a semiconductor thin film having a crystallization region(5) with a horizontally grown crystal. The TFT has a gate insulation layer and a gate electrode on the channel region. The edge of the drain or source region in contact with the channel region is located in the crystallization region in a position not corresponding to the periphery of a crystal growth starting position(7) or a vertically grown starting position. The crystallization region is a single crystal region that is formed by irradiating laser light to a non-single crystal semiconductor layer such that the laser light passes through a homogenizer to have a reverse peak-like light intensity distribution and corresponds to pulse laser light generated by a phase shifter.