| 发明名称 |
Trench mosfet with field relief feature |
| 摘要 |
A trench MOS-gated semiconductor device that includes field relief regions formed below its base region to improve its breakdown voltage, and method for its manufacturing.
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| 申请公布号 |
US7161208(B2) |
申请公布日期 |
2007.01.09 |
| 申请号 |
US20030437984 |
申请日期 |
2003.05.13 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
SPRING KYLE;CAO JIANJUN;HENSON TIMOTHY D |
| 分类号 |
H01L29/76;H01L21/336;H01L29/06;H01L29/10;H01L29/78 |
主分类号 |
H01L29/76 |
| 代理机构 |
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