METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor substrate is provided to increase the uniformity of a thickness of a polycrystalline silicon film between wafers in a lot and the uniformity of a thickness of a gate polycrystalline silicon film between lots. A substrate(110) having a silicon film(114) is prepared. a naturally oxidized film(116) is formed on an upper surface of the silicon film. The substrate is subjected to a first polishing process using a first slurry containing a ceria abrasive, to remove the naturally oxidized film from the upper portion of the silicon film. The silicon film is subjected to a second polishing process using a second slurry to planarize the silicon film.