发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR READING DATA FOR IMPROVING OPERATION SPEED |
摘要 |
A semiconductor memory device and a data read method for improving operation speed in a burst mode are provided to improve the operation speed by enabling a plurality of word lines at the same time in the burst mode. In a semiconductor memory device(300) receiving a row address and a column address at the same time for a write or read operation, a plurality of memory mats(312,322) comprises plural word and column selection lines, respectively, and enables a corresponding word line in response to a word line selection signal, and enables a corresponding column selection line in response to a column selection line selection signal. A control circuit(350) calculates an end address ending data read by receiving a start address starting data read in a burst mode, and outputs the word line selection signal for selecting at least one address to which addresses from the start address to the end address belongs.
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申请公布号 |
KR20070003480(A) |
申请公布日期 |
2007.01.05 |
申请号 |
KR20050059486 |
申请日期 |
2005.07.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, YONG JUN;YOON, YOON HWAN;KIM, SOO YOUNG |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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