发明名称 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR READING DATA FOR IMPROVING OPERATION SPEED
摘要 A semiconductor memory device and a data read method for improving operation speed in a burst mode are provided to improve the operation speed by enabling a plurality of word lines at the same time in the burst mode. In a semiconductor memory device(300) receiving a row address and a column address at the same time for a write or read operation, a plurality of memory mats(312,322) comprises plural word and column selection lines, respectively, and enables a corresponding word line in response to a word line selection signal, and enables a corresponding column selection line in response to a column selection line selection signal. A control circuit(350) calculates an end address ending data read by receiving a start address starting data read in a burst mode, and outputs the word line selection signal for selecting at least one address to which addresses from the start address to the end address belongs.
申请公布号 KR20070003480(A) 申请公布日期 2007.01.05
申请号 KR20050059486 申请日期 2005.07.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, YONG JUN;YOON, YOON HWAN;KIM, SOO YOUNG
分类号 G11C7/00 主分类号 G11C7/00
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