| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent the short between adjacent metal lines and to restrain a contact failure by preventing a protruded portion due to an excessive growth of a metal silicide layer from influencing on the following processes using an etch process capable of forming an undercut portion at a sidewall of the metal silicide layer. A gate insulating layer(32) is formed on a semiconductor substrate(30). A gate electrode composed of a polysilicon layer(34) and a metal silicide pattern(36) is formed on the gate insulating layer. An undercut portion is formed at a sidewall of the metal silicide pattern by performing an etching process on the resultant structure. A thermal oxide layer(42) is selectively formed along an upper surface of the resultant structure.
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