| 摘要 |
A method for forming an isolation layer in a semiconductor device is provided to prevent the damage of a substrate due to plasma or fluorine gas by using an insulating layer for damage protection. A trench is formed in a semiconductor substrate(10). A first HDP(High Density Plasma) oxide layer(16) is partially formed in the trench. A damage protection insulating layer(18) is then formed on the resultant structure. By performing etch-back, the overhang of the first HDP oxide layer is removed. The trench is then entirely filled with a second HDP oxide layer(20).
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