ETCHANT, FORMING METHOD OF METAL LINE USING THE SAME AND FABRICATION METHOD OF LCD USING THE SAME

摘要

Provided are an etchant for etching a Cu/ITO dual layer simultaneously, a method for forming a metal wiring by using the etchant, and a method for preparing a liquid crystal display device by using the etchant. The etchant comprises 17.5-20.5 wt% of HNO3; 0.5-1.5 wt% of H2O2; 0.01-0.1 wt% of H2MoO4; and 0.1-2.0 wt% of a Cu inhibitor. Preferably the Cu inhibitor is an azole-based compound, and the azole-based compound is imidazole. Optionally the etchant comprises further 1.0-2.0 wt% of amino-tetrazole, 0.5-1.0 wt% of methyl benzotriazole and 0.25-0.75 wt% of an antiaging chelating agent. Preferably the antiaging chelating agent is EDTA or ethylene diamine.