发明名称 MEMORY PROTECTED AGAINST ATTACKS BY ERROR INJECTION IN MEMORY CELLS SELECTION SIGNALS
摘要 A memory comprises memory cells arranged in a memory array, and an address decoder to apply memory cells selection signals to the memory array according to a read address applied to the memory. The memory comprises an address reconstruction circuit which reconstructs at least one part of the read address from the memory cells selection signals, and supplies a first reconstructed address able to detect an error injection affecting the selection signals. Particularly but not exclusively applicable to the integrated circuits for chip cards.
申请公布号 US2007002616(A1) 申请公布日期 2007.01.04
申请号 US20060423852 申请日期 2006.06.13
申请人 STMICROELECTRONICS S.A. 发明人 WUIDART SYLVIE;LISART MATHIEU;DEMANGE NICOLAS
分类号 G11C11/34 主分类号 G11C11/34
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