FABRICATION OF ALIGNED NANOWIRE LATTICES

摘要

Methodologies associated with fabricating aligned nanowire lattices are described. One exemplary method (100) embodiment includes twist wafer bonding (110) a thin single crystal semiconductor film and a bulk single crystal substrate of the same material. Periodic non-uniform elastic strains present on the surface of the film after twist wafer bonding (110) may be exploited to control the positioning of alloying seeds and thus the location of nanowire growth. The strains that cause the ordering of nanocrystals may be removed via annealing (140) and alloying after the formation of nanocrystal arrays to promote stress-free epitaxial growth (150) of nanowires in a controlled orientation.