| 摘要 |
A method for forming a contact of a semiconductor device is provided to improve reliability of the semiconductor device and yield of a manufacturing process of the semiconductor device by preventing short between the contacts. An interlayer dielectric(102) is formed on a semiconductor substrate(100) on which a predetermined lower structure is formed. A poly silicon hard mask pattern(106) that defines a formation region of a contact hole(108) is formed on the interlayer dielectric. The interlayer dielectric is etched by using the poly silicon hard mask pattern as a mask to form the contact hole. The poly silicon hard mask pattern remained on the interlayer dielectric is oxidized. A conductive layer(110) is formed to gap-fill the contact hole.
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