| 摘要 |
A method for forming a dual damascene pattern in a semiconductor manufacturing process is provided to remarkably reduce a manufacturing cost thereof by simplifying a process flow. A first dielectric layer(200) and a first conductive layer(202) are formed on a semiconductor substrate. A second dielectric layer(204) is formed on the first conductive layer, and a photoresist is applied on the second dielectric layer. The photoresist is exposed to radiation through a first mask that defines a wiring region(206a). The photoresist is exposed to radiation through a second mask that defines a via hole(206b). The photoresist is developed to form a photoresist pattern having a dual damascene structure, in which the damascene structure includes a via hole pattern and a wiring pattern. The via hole region and the wiring region are formed by anisotropically etching the second dielectric layer. The via hole region and the wiring region are filled with a second conductive layer after removing the photoresist pattern. A contact and a wiring are formed by removing the second conductive layer from outside of the via hole region and the wiring region.
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