发明名称 Semiconductor memory device
摘要 In order to decrease the circuit scale of a power supply circuit and the area occupied by the power supply circuit over a semiconductor substrate, the power supply circuit, which supplies a supply voltage to respective parts of a memory circuit, includes a word driver power supply (first power supply circuit), a sense amplifier power supply (second power supply circuit), a bit line precharge power supply, a cell plate power supply, a substrate bias power supply, and a word line bias power supply. The word driver power supply supplies a word driver with a voltage generated by directly increasing an external supply voltage, whereas the other power supplies (e.g., the sense amplifier power supply) supply a sense amplifier, etc., with a voltage generated by decreasing the external supply voltage.
申请公布号 US7158424(B2) 申请公布日期 2007.01.02
申请号 US20040006588 申请日期 2004.12.08
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 OHTSUKA HIDEFUMI;OHTA KIYOTO;FUJIMOTO TOMONORI
分类号 G11C7/00;G11C11/407;G11C8/08;G11C11/4074;G11C11/408 主分类号 G11C7/00
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