| 摘要 |
On the surface of a substrate 1 , a precursory buffer layer 2 ' composed of an In-base compound or a Zn-base compound, not contained in the substrate 1 , is formed so as to be stacked thereon as a polycrystal layer or an amorphous layer. Before a light emitting region is formed, the precursory buffer layer 2 ' is annealed for re-crystallization to thereby convert it into a buffer layer 2 . This successfully provides a Zn-base semiconductor light emitting device which can readily be fabricated and capable of improving quality of the light emitting region, and a method of fabricating the same.
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