Self-aligned super stressed PFET

摘要

The embodiments of the invention comprise a self-aligned super stressed p-type field effect transistor (PFET). More specifically, a field effect transistor comprises a channel region comprising N-doped material and a gate above the channel region. The field effect transistor also includes a source region on a first side of the channel region and a drain region on a second side of the channel region opposite the first side. The source and drain regions each comprise silicon germanium, wherein the silicon germanium has structural indicia of epitaxial growth.