| 摘要 |
A semiconductor light emitting device comprises: a semiconductor multilayer structure including a light emitting layer, a first semiconductor layer and a second semiconductor layer; a first electrode that forms ohmic contact with the first semiconductor layer in the semiconductor multilayer structure; a second electrode that forms ohmic contact with the second semiconductor layer in the semiconductor multilayer structure; and a light reflector, provided adjacent to the second electrode, configured to reflect at least part of emitted light from the light emitting layer. The second electrode has a plurality of regions having a width being no more than half an in-medium wavelength of the emitted light from the light emitting layer that propagates in the second semiconductor layer.
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