| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMOS image sensor capable of preventing the deterioration in the matching characteristic of a drive transistor due to downsizing and of ensuring the reliability of a first metal contact with the gate of the drive transistor, and a method for manufacturing the same. SOLUTION: The CMOS image sensor includes a reset transistor, a select transistor, a drive transistor, and a photodiode, a line-shaped active region, a gate electrode of the drive transistor arranged so as to intersect the active region, a shielding film situated between the active region and the gate electrode in a region in which the active region and the gate electrodes intersect each other, and a metal contact prevented from the electric short circuit with the active region of a substrate by the shielding film and electrically connected to the gate electrode. COPYRIGHT: (C)2007,JPO&INPIT |
