| 摘要 |
A method of processing a wafer having a device area where a plurality of devices are formed on the front surface and an extra area surrounding the device area and comprising electrodes which are formed in the device area, comprising: a reinforcement forming step for removing an area, which corresponds to the device area, in the back surface of the wafer to reduce the thickness of the device area to a predetermined value and keeping an area, which corresponds to the extra area, in the back surface of the wafer to form an annular reinforcement; and a via-hole forming step for forming a via-hole in the electrodes of the wafer which has been subjected to the reinforcement forming step.
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