| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which a manufacturing cost can be reduced, manufacturing time is reduced and productivity is improved. SOLUTION: A method for manufacturing a semiconductor device comprises a step for forming a first layer comprising a metal on a substrate, a step for forming a second layer comprising an inorganic material on the first layer, a step for forming a third layer comprising a thin film transistor on the second layer, a step for irradiating the first, second and third layers with a laser beam to form an opening part by removing at least the second and third layers, a step for bonding a film to the surface of the third layer, and a step for separating the third layer from the substrate with the inside part of the first layer or the part between the first layer and the second layer as a boundary by using the film. COPYRIGHT: (C)2007,JPO&INPIT
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