| 摘要 |
<p>A transfer MOS transistor is provided to improve pumping capability of internal power by disposing a plurality of contacts in an n^+ type contact region. A well region(210) of first conductivity type is disposed in a predetermined upper region of a semiconductor substrate. A well region(220) of second conductivity type is disposed in a predetermined upper region of the well region of first conductivity type . A source/drain region(231,232) of first conductivity type is separated from the upper well region of second conductivity type by a channel region. A gate electrode(270) is formed on the channel region by interposing a gate insulation layer. A high density contact region of first conductivity type is separated from the source/drain region by the well region of second conductivity type over the edge of the well region. The current transfer path to the source region of first conductivity type is formed along the upper well region of second conductivity type by the high density contact region. A high density contact region of second conductivity type is separated from the high density contact region of first conductivity type by the well regions over the well region of first conductivity type. The current transfer path to the source region of the first conductivity type is formed along the upper well regions by the high density contact region of second conductivity type.</p> |
