| 摘要 |
PROBLEM TO BE SOLVED: To disclose a local sense amplifier of a semiconductor memory device provided with a redundancy circuit. SOLUTION: The local sense amplifier includes a differential transistor pair, a current supply circuit, and a coupling element. The differential transistor pair amplifies a differential signal pair applied to a local input/output line pair to generate an amplified signal pair and provides it to a global input/output line pair. The current supply circuit supplies a current to the differential transistor pair in response to an enable signal. The coupling element electrically couples or cuts off low potential terminals of the differential transistor pair in response to the enable signal. The coupling element may comprise a MOS transistor which switches in response to the enable signal. Consequently, the local sense amplifier prevents an unnecessary current loop from being formed therein when a circuit is not operated, and transmission errors of signals between local input/output lines and global input/output lines can be prevented. COPYRIGHT: (C)2007,JPO&INPIT
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