LOW K DIELECTRIC CVD FILM FORMATION PROCESS WITH IN-SITU IMBEDDED NANOLAYERS TO IMPROVE MECHANICAL PROPERTIES

摘要

A material stack (12) is provided comprising one or more films (14) that have a crack velocity of about IE- 10 m/sec or greater and at least one monolayer (16) within or in direct contact with the one or more films (14), wherein the at least one monolayer (16) reduces the crack velocity of the material stack (12) to a value of less than lE-10 m/sec. The one or more films ( 14) are not limited to low k dielectrics, but may include materials such as a metal. In a preferred embodiment, a low k dielectric stack (12) is provided, having an effective dielectric constant k, of about 3.0 or less, in which the mechanical properties of the stack (12) are improved by introducing at least one nanolayer (16) into the dielectric stack (12). The improvement in mechanical properties is achieved without significantly increasing the dielectric constant of me films within the stack (12) and without the need of subjecting the inventive dielectric stack (12) to any post treatment steps.