SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

摘要

A semiconductor device manufacturing method comprises a step (A) of preparing a substrate provided with a semiconductor layer having a major surface and an element isolation structure (STI) formed in an isolation region (70) dividing the major surface into element active regions (50, 60), a step (B) of growing an epitaxial layer containing Si and Ge on the selected element active region (50) out of the element active regions (50, 60) in the major surface of the semiconductor layer, and a step (C) of fabricating transistors in the element active region (50) where the epitaxial layer is formed out of the element active regions (50, 60) and in an element active region (A2) where no epitaxial layer is formed. The step (A) includes a sub-step (a1) of forming dummy regions (80) surrounded by the element isolation structure (STI) in the isolation region (70). The step (B) includes a sub-step (b1) of growing a layer of the same material as the epitaxial layer on a selected region of the dummy regions (80).