| 摘要 |
A random pulsed DC power supply and a target biasing method are provided to restrain the generation of arc or splash in a PVD(Physical Vapor Deposition) chamber by removing grains from a target. A target biasing process is performed by using a predetermined voltage capable of generating a plasma in a PVD chamber. The predetermined voltage is reversed at least two times for about one second after the generation of arc is checked in the chamber. The predetermined voltage is reversed every 5ms or every 100ms. The predetermined voltage is capable of being reversed 10 to 20 times.
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