| 摘要 |
A example disclosed semiconductor fabrication method includes forming a well region in a semconductor substrate where device isolation structures are formed, depositing a buffer oxide layer and a nitride layer on the semiconductor substrate, forming a dummy gate by patterning the nitride layer; depositing a liner oxide layer and an insulation layer on the buffer oxide layer and the dummy gate and performing a planarization process, removing the dummy gate and implanting ions, removing the liner oxide layer and the insulation layer and performing a thermal treatment, and forming a polysilicon gate electrode by using the buffer oxide layer as a gate oxide layer.
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