发明名称 Doped organic semiconductor materials and process for their preparation
摘要 The present invention relates to a process for the preparation of doped organic semiconductor materials having an increased charge carrier density and effective charge carrier mobility, by doping with a dopant, a process in which after mixing the dopant into the organic semiconductor material, hydrogen, carbon monoxide, nitrogen or hydroxyl radicals are split off and at least one electron is transferred to the semiconductor material or from the semiconductor material. The process is distinguished by the fact that an uncharged organic compound is used as dopant. Doped organic semiconductor materials are obtainable by one of the processes. The semiconductor materials are distinguished by the fact that the doped layer contains cations of at least one organic compound, the uncharged form of the organic compound being unstable in air.
申请公布号 US7151007(B2) 申请公布日期 2006.12.19
申请号 US20040920062 申请日期 2004.08.17
申请人 NOVALED GMBH 发明人 WERNER ANSGAR;LI FENGHONG;PFEIFFER MARTIN
分类号 H01L51/40;H01L51/50;C07C13/15;C07C13/24;C07C15/20;C30B15/00;C30B21/06;C30B23/00;C30B25/00;C30B27/02;C30B28/10;C30B28/12;C30B28/14;C30B30/04;C30B31/00;H01L31/04;H01L51/00;H01L51/30;H01L51/42;H05B33/14;H05B33/22 主分类号 H01L51/40
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