NAND FALSH MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A NAND type flash memory device and its manufacturing method are provided to improve the leakage current and breakdown voltage characteristics between a control gate electrode structure of a select transistor and an active region by forming a first control gate electrode at a predetermined portion between an isolation pattern and a second control gate electrode. An isolation pattern(120) for defining an active region is formed on a semiconductor substrate(100) with a memory transistor region and a select transistor region. A gate insulating layer and a floating conductive pattern are sequentially formed on the active region. An interlayer dielectric and a first control conductive layer(165) are formed thereon. An opening portion for exposing the floating conductive pattern to the outside is formed on the resultant structure by patterning selectively the first control conductive layer and the interlayer dielectric. At this time, the first control conductive layer selectively remains at a bottom of the opening portion. A second control conductive layer(170) for contacting the floating conductive pattern is formed in the opening portion.