发明名称 Method for forming high-resolution pattern and substrate having prepattern formed thereby
摘要 Disclosed is a method for forming a pattern, which comprises the steps of: (a) providing a substrate having a sacrificial layer made of a first material, partially or totally formed on the substrate; (b) forming pattern grooves, which are free from the first material and have a line width of a first resolution or lower, on the sacrificial layer by using a first means; (c) filling the pattern grooves with a second material by using a second means; and (d) removing the first material present in a remaining sacrificial layer by way of irradiation or heating, wherein the first material has a threshold fluence of less than a threshold fluence of the second material, the first material is removed in step (d) under a dose ranging from the threshold fluence of the first material to that of the second material, and the pattern is formed on the substrate by the second material. A substrate having a pre-pattern formed by the method is also disclosed. The method for forming a pattern provides a high-resolution pattern with little or no waste of the second material, thereby reducing production costs. The method includes use of the first means with a high resolution, such as focused energy beams of laser, combined with the second means with a low resolution, such as ink-jet, and provides a high-resolution pattern with high processing efficiency.
申请公布号 US2006281334(A1) 申请公布日期 2006.12.14
申请号 US20060431923 申请日期 2006.05.11
申请人 LG CHEM, LTD. 发明人 SHIN DONG-YOUN;KIM TAE SU
分类号 H01L21/20;H01L23/58 主分类号 H01L21/20
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