| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of fabricating a flash memory device capable of improving the operation performance of a memory cell in which a nitride film is first deposited on a semiconductor substrate or a polysilicon film and then an oxide film is formed under the nitride film by an oxidization process using an anneal process, so that a tunnel oxide film or an ONO1 oxide film having a thin thickness and a good film quality can be formed. SOLUTION: The method of manufacturing a flash memory device includes steps of: performing a cleaning process on a surface of a semiconductor substrate 31 in which a field region and an active region have been defined, and then vapor-depositing a nitride film 32a on the semiconductor substrate 31; and performing an oxidization process through the use of an anneal process in an N<SB>2</SB>O or NO gas atmosphere, to form a silicon oxide film layer 32b in the interface between the nitride film 32a and the semiconductor substrate 31, resulting in forming on the semiconductor substrate 31 a tunnel oxide film 32 having such a structure that the silicon oxide film and the nitride film 32a are laminated; and forming a gate pattern on the tunnel oxide film 32 of the active region. COPYRIGHT: (C)2007,JPO&INPIT
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