| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging device of which a light shielding layer has a sufficiently low spectral transmittance across the entire wavelength range. SOLUTION: The solid state imaging device comprises a semiconductor substrate 1 on which a solid state imaging element having a plurality of photoelectric converters 2 is formed, a light shielding film 4 which covers the semiconductor substrate and is provided with an opening above the photoelectric converter, a flattened layer 5 formed on the opening and light shielding film, and a plurality of light shielding layers 7 having spectral transmittance characteristics different from each other stacked on the flattened layer with an opening provided on the photoelectric converter. The plurality of light shielding layers are combined to provide a specified spectral transmittance characteristics. COPYRIGHT: (C)2007,JPO&INPIT
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