| 发明名称 |
METHOD AND APPARATUS FOR INCREASE STRAIN EFFECT IN A TRANSISTOR CHANNEL |
| 摘要 |
Method of enhancing stress in a semiconductor device having a gate stack disposed on a substrate. The method utilizes depositing a nitride film along a surface of the substrate and the gate stack. The nitride film is thicker over a surface of the substrate and thinner over a portion of the gate stack.
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| 申请公布号 |
US2006281272(A1) |
申请公布日期 |
2006.12.14 |
| 申请号 |
US20060465663 |
申请日期 |
2006.08.18 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
YANG HAINING S.;ZHU HUILONG |
| 分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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