METHOD OF REMOVING PHOTORESIST AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME

摘要

A method for removing photoresist and a method for manufacturing semiconductor device using the same are provided to remove the photoresist remaining at an opening having an aspect ratio by using an active ion. Plasma including an active ion and a radical is generated. The active ion is adjusted to have a directional property. Photoresist is removed by using the active ion having the directional property as a main etch element, and using the radical as an auxiliary etch element. The plasma includes the active ion from 10 to 90%. A bias voltage is applied to the active ion so that the active ion has the directional property. The bias voltage ranges from 100 to 300V. The photoresist is removed at a pressure range from 10 to 800 mTorr and at a temperature range from 10 to 50 ‹C.