MOS FIELD EFFECT TRANSISTOR HAVING THICK EDGE GATE INSULATING LAYER PATTERN AND METHOD OF FABRICATING THE SAME

摘要

An MOSFET and a manufacturing method thereof are provided to prevent the generation of a GIDL(Gate Induced Drain Leakage) current by restraining the convergence of an electric field using a thick edge portion of a gate insulating pattern. An isolation region(303) for defining an active region(302) is formed on a semiconductor substrate(301). Source/drain regions are formed in the active region. At this time, a channel region(308) is located between the source/drain regions. A gate electrode(317) is formed on the channel region of the active region. A gate insulating layer is formed between the channel region and the gate electrode. The gate insulating layer has a thick edge portion(323).