FORMATION OF FINE PATTERN

摘要

PURPOSE:To improve the heat resistance of resist patterns without entailing the dimensional fluctuation of these resist patterns. CONSTITUTION:A chemical amplification type resist 2 consisting of a radiation sensitive material essentially consisting of a high-polymer compd. or monomolecular compd. in which at least a part of phenolic hydroxyl groups are substd. by protective groups easily being eliminated by the effect of an acid is applied on a semiconductor substrate 1. This chemical amplification type resist 2 is then exposed or irradiated with radiations and thereafter, the chemical amplification type resist 2 is developed, by which the resist patterns 2A are formed. The resist patterns 2A are thereafter irradiated with the radiations over the entire surface in the state of maintaining the temp. of the semiconductor substrate 1 at the glass transition point of the chemical amplification type resist 2 or below to eliminate the protective groups in the chemical amplification type resist 2, by which the heat resistance of the resist patterns 2 is improved.