| 摘要 |
A multilayer interconnect structure for an integrated circuit device using copper technology has an interconnect structure formed in the aluminium contact pad layer. The process for forming the IC device comprises forming one or more interconnect levels overlying a substrate, and forming a bond pad level. The bond pad level comprises a plurality of contact pads 220, 228, 245 and aluminium interconnects 284, 294 configured to connect underlying levels of copper interconnect 280, 282, 250, 292 to one another to provide signal routing. Also provided are interconnects configured to transfer power from the contact pads 220 228 245 to underlying interconnect levels 222, 223, 230, 238. Thus a power bus interconnect may also be formed in the same layer as the aluminium contact pad. |
