CONTACT STRUCTURE FOR PIXEL SHRINKING AND METHOD FOR MANUFACTURING THE SAME

摘要

A contact structure for a pixel shrink of an image sensor is provided to reduce the area of a contact region in a pixel by using a buried contact and/or a butting contact. An image sensor has a polysilicon layer(402) and an active region in a pixel such that the polysilicon layer and the active region need to be interconnected electrically. The polysilicon layer is extended to partially overlap the upper part of the active region so that a buried contact(403) is formed between the active region and the polysilicon layer. The buried contact is composed of the active region, an oxide layer for opening the active region, and the polysilicon layer formed on the active region in the open region.