发明名称 |
REFRACTORY METAL-BASED ELECTRODES FOR WORK FUNCTION SETTING IN SEMICONDUCTOR DEVICES |
摘要 |
The present invention provides, in one embodiment, a gate structure ( 100 ). The gate structure comprises a gate dielectric ( 105 ) and a gate ( 110 ). The gate dielectric includes a refractory metal and is located over a semiconductor substrate ( 115 ). The semiconductor substrate has a conduction band and a valence band. The gate is located over the gate dielectric and includes the refractory metal. The gate has a work function aligned toward the conduction band or the valence band. Other embodiments include an alternative gate structure ( 200 ), a method of forming a gate structure ( 300 ) for a semiconductor device ( 301 ) and a dual gate integrated circuit ( 400 ).
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申请公布号 |
US2006273414(A1) |
申请公布日期 |
2006.12.07 |
申请号 |
US20060465219 |
申请日期 |
2006.08.17 |
申请人 |
COLOMBO LUIGI;CHAMBERS JAMES J;VISOKAY MARK R |
发明人 |
COLOMBO LUIGI;CHAMBERS JAMES J.;VISOKAY MARK R. |
分类号 |
H01L29/94;H01L21/3205;H01L21/8234;H01L21/8238;H01L29/49;H01L29/76;H01L29/78 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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