发明名称 POWER SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent the outflow of an oil compound interposed between a supporting substrate of a semiconductor device and an external cooling fin to the external of the supporting substrate, and to prevent the increase of the contacting thermal resistance generated between the supporting substrate and the external cooling fin. SOLUTION: The semiconductor device is an internally insulated power semiconductor device wherein it has a metal substrate in its bottom surface, and its side surfaces and its top surface are covered with an organic resin. Further, a plurality of power semiconductor elements are mounted on its inside, and plural sheets of insulating substrates are interposed between the metal substrate present on its bottom surface and the semiconductor elements mounted on the inside of the module. Hereupon, resin rings are so provided on the side of the heat radiating surface of the metal substrate present on its bottom surface that there is eliminated the outflow of an oil compound caused by the warp change of its supporting substrate which is based on the temperature change generated when the semiconductor elements are operated or not operated. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006332479(A) 申请公布日期 2006.12.07
申请号 JP20050156543 申请日期 2005.05.30
申请人 HITACHI LTD 发明人 HAYAKAWA SEIICHI;KAMIDA YUKIO
分类号 H01L25/07;H01L25/18 主分类号 H01L25/07
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