| 摘要 |
A high-energy radiation detector is disclosed which uses a semiconductor material to absorb high-energy radiation and emit secondary light in response. The semiconductor is designed to be largely transparent for the interband light it emits so that the generated seciondary photons can reach the semiconductor surface, to be detected by a suitable photo-detector. The semiconductor thus plays a role of a scintillator with the emitted light registered by a photo-detector. Two different device embodiments are disclosed. The first embodiment employs a uniform bulk slab of the appropriately chosen semiconductor, such as n-doped InP. Its principal advantage lies in the simplicity and low cost. The second device employs a multi-layer heterostructure. The principal advantage of the second type detector is the possibility of a substantial enhancement in the efficiency of absorption of the primary high-energy radiation. With appropriate modifications the disclosed detector can be used both for radiation monitoring, like a Gaiger counter, and for high-resolution analysis and characterization of the ionizing radiation.
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