发明名称 |
Trench-gate field effect transistors and methods of forming the same |
摘要 |
A field effect transistor includes a body region of a first conductivity type over a semiconductor region of a second conductivity type. A gate trench extends through the body region and terminates within the semiconductor region. At least one conductive shield electrode is disposed in the gate trench. A gate electrode is disposed in the gate trench over but insulated from the at least one conductive shield electrode. A shield dielectric layer insulates the at lease one conductive shield electrode from the semiconductor region. A gate dielectric layer insulates the gate electrode from the body region. The shield dielectric layer is formed such that it flares out and extends directly under the body region.
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申请公布号 |
US2006273386(A1) |
申请公布日期 |
2006.12.07 |
申请号 |
US20060441386 |
申请日期 |
2006.05.24 |
申请人 |
YILMAZ HAMZA;CALAFUT DANIEL;KOCON CHRISTOPHER B;SAPP STEVEN P;PROBST DEAN E;KRAFT NATHAN L;GREBS THOMAS E;RIDLEY RODNEY S;DOLNY GARY M;MARCHANT BRUCE D;YEDINAK JOSEPH A |
发明人 |
YILMAZ HAMZA;CALAFUT DANIEL;KOCON CHRISTOPHER B.;SAPP STEVEN P.;PROBST DEAN E.;KRAFT NATHAN L.;GREBS THOMAS E.;RIDLEY RODNEY S.;DOLNY GARY M.;MARCHANT BRUCE D.;YEDINAK JOSEPH A. |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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地址 |
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