SEMICONDUCTOR PRESSURE SENSOR

摘要

A semiconductor pressure sensor is provided to prevent the generation of an electric field between a shield layer and a reference electric potential layer by electrically connecting the shield layer to the reference electric potential layer, to have the same potential. In a semiconductor pressure sensor having a diaphragm(4) corresponding to pressure of a fluid to be measured, the diaphragm includes a silicon substrate(6) with a piezo resistance element(7) forming a bridge circuit and a shield layer(9) for an electromagnetic shield formed on a surface of the silicon substrate to which the fluid to be measured is contacted. The shield layer is electrically connected to the silicon substrate so as to have the same potential.