发明名称 Semiconductor integrated circuit device and process for manufacturing the same
摘要 In a peripheral circuit region of a DRAM, two connection holes, for connecting a first layer line and a second layer line electrically are opened separately in two processes. After forming the connection holes, plugs are formed in the respective connection holes.
申请公布号 US7145193(B2) 申请公布日期 2006.12.05
申请号 US20020470573 申请日期 2002.08.29
申请人 HITACHI, LTD. 发明人 NAKAMURA YOSHITAKA;ASANO ISAMU;KAWAKITA KEIZOU;YAMADA SATORU
分类号 H01L27/108;H01L21/768;H01L21/8242;H01L23/522 主分类号 H01L27/108
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