METHOD OF FORMING DUAL FULLY SILICIDED GATE AND DEVICE OBTAINED BY THE METHOD

摘要

PROBLEM TO BE SOLVED: To provide a less complicated method of manufacturing dual metal gate CMOS devices in which the work function of the metal gate electrode of each transistor type can be designed in an easy and efficient way, irrespective of the geometry and/or dimensions of the transistor or of the gate insulator used. SOLUTION: The method of manufacturing a dual metal gate CMOS device has a step of providing at least two MOSFET devices each having a semiconductor gate electrode; a step of laminating a metallic layer of a predetermined thickness on each of the semiconductor electrode having a different thickness; and a step of executing thermal processing. The thickness of each of the semiconductors is selected so that the semiconductor gate electrodes can be fully silicided, and the at least two MOSFETs thereby have different work functions. COPYRIGHT: (C)2007,JPO&INPIT