| 摘要 |
A plasma etching apparatus is provided to obtain stable etch by forming stably a plasma and to minimize contamination of a process chamber by optimizing the cleaning effect of the process chamber. A plasma etching apparatus comprises a process chamber(100), a gas supply part(110) for supplying etch gas to the process chamber, and a coil assembly(200) for surrounding the upper portion of the process chamber. The coil assembly is provided with a coil(210) and a source power(220) for supplying a power to the coil. The distance between the coil and the process chamber is 4 mm below.
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