发明名称 METHOD FOR MANUFACTURING SILICON
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing silicon not being mixed with cathode-derived impurities by the electrolysis reduction of silicon dioxide using silicon for a cathode. SOLUTION: Silicon is manufactured by the method that the electrolysis reduction is performed in a molten salt using the cathode which is constituted of a material being mainly silicon and where silicon oxide is contacted. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006321688(A) 申请公布日期 2006.11.30
申请号 JP20050147139 申请日期 2005.05.19
申请人 KYOTO UNIV 发明人 FUKUNAKA YASUHIRO;NOHIRA TOSHIYUKI;YASUDA KOJI;HAGIWARA RIKA
分类号 C01B33/023;C25B1/00 主分类号 C01B33/023
代理机构 代理人
主权项
地址
您可能感兴趣的专利