发明名称 METHOD FOR PRODUCING SILICON
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an industrially advantageous method in which contaminants are removed from a chlorosilane circulation system producing trichlorosilane when silicon is produced from trichlorosilane by a vapor deposition method. <P>SOLUTION: In the vapor deposition method of silicon, semiconductor grade silicon is produced while producing solar cell grade silicon by converting a portion of trichlorosilane into the solar cell class silicon. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2006321675(A) 申请公布日期 2006.11.30
申请号 JP20050145090 申请日期 2005.05.18
申请人 TOKUYAMA CORP 发明人 WAKAMATSU SATOSHI;ODA KAIKO
分类号 C01B33/027;H01L31/04 主分类号 C01B33/027
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