发明名称 |
Semiconductor Devices Having Gallium Nitride Epilayers on Diamond Substrates |
摘要 |
Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
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申请公布号 |
US2006266280(A1) |
申请公布日期 |
2006.11.30 |
申请号 |
US20060279553 |
申请日期 |
2006.04.12 |
申请人 |
FRANCIS DANIEL;EJECKAM FELIX;WASSERBAUER JOHN;BABIC DUBRAVKO |
发明人 |
FRANCIS DANIEL;EJECKAM FELIX;WASSERBAUER JOHN;BABIC DUBRAVKO |
分类号 |
C30B23/00;C30B7/00;C30B21/02;C30B25/00;C30B28/06;C30B28/12;C30B28/14 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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地址 |
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