发明名称 |
Electrochemical method for the direct nanostructured deposition of material onto a substrate, and semiconductor component produced according to said method |
摘要 |
A method of fabricating a nano-scaled semiconductor by depositing upon a substrate, within the confines of a narrowly limited electric field, from an adjustable mixture of precursor gases containing different precursor compounds, nano-scaled deposits of common chemical compounds released in consequence of the precursor compounds breaking down upon the simultaneous or sequential application of a voltage exceeding a predetermined threshold value.
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申请公布号 |
US2006269688(A1) |
申请公布日期 |
2006.11.30 |
申请号 |
US20040553102 |
申请日期 |
2004.04.07 |
申请人 |
HAHN-MEITNER-INSTITUT BERLIN GMBH |
发明人 |
SADEWASSER SASCHA;GLATZEL THILO;LUX-STEINER MARTHA |
分类号 |
B05D3/00;C23C8/00;C23C16/04;H01L21/365;H05H1/24 |
主分类号 |
B05D3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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