发明名称 Electrochemical method for the direct nanostructured deposition of material onto a substrate, and semiconductor component produced according to said method
摘要 A method of fabricating a nano-scaled semiconductor by depositing upon a substrate, within the confines of a narrowly limited electric field, from an adjustable mixture of precursor gases containing different precursor compounds, nano-scaled deposits of common chemical compounds released in consequence of the precursor compounds breaking down upon the simultaneous or sequential application of a voltage exceeding a predetermined threshold value.
申请公布号 US2006269688(A1) 申请公布日期 2006.11.30
申请号 US20040553102 申请日期 2004.04.07
申请人 HAHN-MEITNER-INSTITUT BERLIN GMBH 发明人 SADEWASSER SASCHA;GLATZEL THILO;LUX-STEINER MARTHA
分类号 B05D3/00;C23C8/00;C23C16/04;H01L21/365;H05H1/24 主分类号 B05D3/00
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