| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent the damage of titanium silicide formed at a lower portion of a lower electrode without using an additional process. A storage node contact plug(23) is formed on a substrate(21). An insulating layer(22) having a hole for opening the storage node contact plug is formed on the resultant structure. A titanium silicide layer(25) is formed on the exposed storage node contact plug. A first titanium nitride layer(27) and a titanium film are sequentially formed on the resultant structure. The titanium film is changed to a second titanium nitride layer by treating under nitrogen atmosphere. A third titanium nitride layer(29) is formed on the second titanium nitride layer. The insulating layer is selectively eliminated by using wet-chemical.
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