| 摘要 |
A method for forming an IMD(Inter-Metal Dielectric) is provided to reduce tension stress and to restrain the crack of a metal layer by using a fluorinated silicide glass as the IMD. An FSG(Fluorinated Silicide Glass) film(120) as an inter-metal dielectric is deposited on a metal layer having a metal line(110) by using HDP(High Density Plasma). The deposited FSG film is planarized by CMP(Chemical Mechanical Polishing). Then, an FSG capping layer(130) is deposited on the FSG film by using a general plasma deposition.
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