| 摘要 |
PROBLEM TO BE SOLVED: To obtain a field effect transistor whose input (output) impedance can be increased without increasing its chip size. SOLUTION: In the field effect transistor; a source pad, a drain pad, and a gate feeder sandwiched between the source and drain pads are formed on a semiconductor substrate, and a gate pad is formed above the source pad via an insulating film. Further, the gate pad is connected with the gate feeder via a metal wiring whose length is not shorter than 100μm. Also, it is preferable that a portion of the gate pad is disposed on the semiconductor substrate via no insulating film and no source pad, and the metal wiring is wire-bonded to the portion of the gate pad. COPYRIGHT: (C)2007,JPO&INPIT
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